Method of end point detection in a plasma etching process

Details Method of end point detection in a plasma etching process Method of end point detection in a plasma etching process

1991-03-05

1992-11-03

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156662, 356357, G01N 2100

Patent

active

051605767

ABSTRACT:
A method of optically detecting a change in intensity of an emission peak in a plasma process, such as a plasma etching process, by reflecting an emission spectrum of radiation from the plasma reaction off of a pair of rugate filters. The reflected emission spectrum has increased in-band reflections and decreased out-of-band reflections which provides reduced noise and an easier-to-detect emission peak. The method can be used for end-point detection in a plasma etching process such as etching of SiO.sub.2.

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patent: 4998021 (1991-03-01), Mimasaka

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