Semiconductor device manufacturing: process – Forming schottky junction – Using platinum group metal
Reexamination Certificate
2006-11-07
2006-11-07
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Forming schottky junction
Using platinum group metal
C438S630000, C257SE23157, C257S021000
Reexamination Certificate
active
07132352
ABSTRACT:
A method of forming an integrated circuit with a semiconductor substrate is provided. A gate dielectric is formed on the semiconductor substrate, and a gate is formed on the gate dielectric. A metallic layer is formed on the semiconductor substrate, and the metallic layer is reacted with the semiconductor substrate to form an early phase of silicide. Implanted shallow source/drain junctions are formed immediately beneath the silicide. A final phase of the silicide is formed. An interlayer dielectric is deposited above the semiconductor substrate, and contacts are then formed to the silicide.
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Besser Paul R.
Chan Simon Siu-Sing
Patton Jeffrey P.
Advanced Micro Devices , Inc.
Estrada Michelle
Ishimaru Mikio
Tobergte Nicholas J
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