Method of eliminating source/drain junction spiking, and...

Semiconductor device manufacturing: process – Forming schottky junction – Using platinum group metal

Reexamination Certificate

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C438S630000, C257SE23157, C257S021000

Reexamination Certificate

active

07132352

ABSTRACT:
A method of forming an integrated circuit with a semiconductor substrate is provided. A gate dielectric is formed on the semiconductor substrate, and a gate is formed on the gate dielectric. A metallic layer is formed on the semiconductor substrate, and the metallic layer is reacted with the semiconductor substrate to form an early phase of silicide. Implanted shallow source/drain junctions are formed immediately beneath the silicide. A final phase of the silicide is formed. An interlayer dielectric is deposited above the semiconductor substrate, and contacts are then formed to the silicide.

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