Method of eliminating poly stringer in a memory device

Details Method of eliminating poly stringer in a memory device Method of eliminating poly stringer in a memory device

1997-12-08

1999-12-14

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438587, 438593, 438963, H01L 21336

Patent

active

060016884

ABSTRACT:
A method (200) of making a flash memory device without poly stringers includes forming a stacked gate region (202) on a substrate (102) and forming one or more word lines (122a, 122b, 204) in the stacked gate region. The method further includes performing a self-aligned etch (206) in regions adjacent to the one or more word lines (122a, 122b) and subsequently performing an isotropic etch (208) to remove any poly stringers (128) in the regions adjacent the one or more word lines (122a, 122b).

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