Method of driving multi-level variable resistive memory...

Static information storage and retrieval – Systems using particular element – Resistive

Reexamination Certificate

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Details

C365S163000, C365S145000, C365S203000, C365S207000

Reexamination Certificate

active

07639522

ABSTRACT:
Disclosed is a method of driving a multi-level variable resistive memory device. A method of driving a multi-level variable resistive memory device includes supplying a write current to a variable resistive memory cell so as to change resistance of the variable resistive memory cell, verifying whether or not changed resistance enters a predetermined resistance window, and supplying a write current having an increased or decreased amount from the write current supplied most recently on the basis of the verification result so as to change resistance of the variable resistive memory cell.

REFERENCES:
patent: 6958934 (2005-10-01), Fan et al.
patent: 6961267 (2005-11-01), Fastow et al.
patent: 2004/0228163 (2004-11-01), Khouri et al.
patent: 2006/0285392 (2006-12-01), Incarnati et al.
patent: 1729303 (2006-12-01), None
patent: 10083686 (1998-03-01), None
patent: 2004158143 (2004-06-01), None
patent: 1020030048881 (2003-06-01), None
patent: 1020060030171 (2006-04-01), None

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