Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2007-09-14
2009-12-29
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Systems using particular element
Resistive
C365S163000, C365S145000, C365S203000, C365S207000
Reexamination Certificate
active
07639522
ABSTRACT:
Disclosed is a method of driving a multi-level variable resistive memory device. A method of driving a multi-level variable resistive memory device includes supplying a write current to a variable resistive memory cell so as to change resistance of the variable resistive memory cell, verifying whether or not changed resistance enters a predetermined resistance window, and supplying a write current having an increased or decreased amount from the write current supplied most recently on the basis of the verification result so as to change resistance of the variable resistive memory cell.
REFERENCES:
patent: 6958934 (2005-10-01), Fan et al.
patent: 6961267 (2005-11-01), Fastow et al.
patent: 2004/0228163 (2004-11-01), Khouri et al.
patent: 2006/0285392 (2006-12-01), Incarnati et al.
patent: 1729303 (2006-12-01), None
patent: 10083686 (1998-03-01), None
patent: 2004158143 (2004-06-01), None
patent: 1020030048881 (2003-06-01), None
patent: 1020060030171 (2006-04-01), None
Cho Woo-yeong
Kim Du-eung
Kim Ki-sung
Nguyen Van-Thu
Reidlinger R Lance
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
LandOfFree
Method of driving multi-level variable resistive memory... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of driving multi-level variable resistive memory..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of driving multi-level variable resistive memory... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4092596