Method of driving memory device to implement multiple states

Details Method of driving memory device to implement multiple states Method of driving memory device to implement multiple states

2008-01-22

2008-01-22

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S115000

Reexamination Certificate

active

07321503

ABSTRACT:
A method of driving a multi-state organic memory device which includes an organic memory layer between upper and lower electrodes. The method comprises continuously applying voltages having different polarities to conduct switching into a low resistance state, and applying a single pulse to conduct switching into a high resistance state. A multi-state memory is realized using one memory device, since it is possible to gain three or more resistance states, thus significantly improving integration. The method has excellent reproducibility, and the resistance state induced by multiple pulses has an excellent nonvolatile characteristic.

REFERENCES:
patent: 5270965 (1993-12-01), Yanagisawa et al.
patent: 5389475 (1995-02-01), Yanagisawa et al.
patent: 6910933 (2005-06-01), Matsuo et al.
patent: 2002/0163057 (2002-11-01), Bulovic et al.
patent: 2004/0027849 (2004-02-01), Yang et al.
patent: 62-95882 (1987-05-01), None
M. Bauer et al., “A Multilevel-Cell 32Mb Flash Memory”, IEEE, ISSCC Digest of Technical Papers, 1995, pp. 132-133.

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