Method of doping a gate electrode of a field effect transistor

Details Method of doping a gate electrode of a field effect transistor Method of doping a gate electrode of a field effect transistor

2007-06-04

2009-02-17

Menz, Douglas M (Department: 2891)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S527000, C977S742000, C977S847000, C257SE21043

Reexamination Certificate

active

07491631

ABSTRACT:
A method of fabricating a structure and fabricating related semiconductor transistors and novel semiconductor transistor structures. The method of fabricating the structure includes: providing a substrate having a top surface; forming an island on the top surface of the substrate, a top surface of the island parallel to the top surface of the substrate, a sidewall of the island extending between the top surface of the island and the top surface of the substrate; forming a plurality of carbon nanotubes on the sidewall of the island; and performing an ion implantation, the ion implantation penetrating into the island and blocked from penetrating into the substrate in regions of the substrate masked by the island and the carbon nanotubes.

REFERENCES:
patent: 4874946 (1989-10-01), Kazmerski
patent: 6232706 (2001-05-01), Dai et al.
patent: 6326279 (2001-12-01), Kakizaki et al.
patent: 6420092 (2002-07-01), Yang et al.
patent: 6515325 (2003-02-01), Farnworth et al.
patent: 6756026 (2004-06-01), Colbert et al.
patent: 6759305 (2004-07-01), Lee et al.
patent: 7271079 (2007-09-01), Furukawa et al.
patent: 2002/0025374 (2002-02-01), Lee et al.
patent: 2002/0167374 (2002-11-01), Hunt et al.
patent: 2003/0012722 (2003-01-01), Jie Liu
patent: 2003/0165418 (2003-09-01), Ajayan et al.
patent: 2003/0178617 (2003-09-01), Appenzeller et al.
patent: 2004/0058153 (2004-03-01), Ren et al.
patent: 2004/0121501 (2004-06-01), Large et al.
patent: 2004/0137730 (2004-07-01), Kim et al.
patent: 2005/0095765 (2005-05-01), Saiki et al.
Yun et al.; “Fabrication of Metal Nanowire Using Carbon Nanotube as a Mask”; J. Vac. Sci. Technol. A 18(4); Jul./Aug. 2000; pp. 1329-1332.
Krasheninnikov et al.; Carbon Nanotubes as Masks Against Ion Irradiation: An Insight From Atomistic Simulations; Applied Physics Letters; vol. 81, No. 6; Aug. 5, 2002; pp. 1101-1103.
Pomoell et al.; “Stopping of Energetic Ions in Carbon Nanotubes”; Nuclear Instruments and Methods in Physics Research B 206 (2003); pp. 18-21.
Kotakoski et al.; Irradiation-Assisted Substitution of Carbon Atoms With Nitrogen and Boron in Single-Walled Carbon Nanotubes; Nuclear Instruments and Methods in Physics Research B 228 (2005); pp. 31-36.

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