Method of doping a gate electrode of a field effect transistor

Details Method of doping a gate electrode of a field effect transistor Method of doping a gate electrode of a field effect transistor

2007-09-18

2007-09-18

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S527000, C977S742000, C977S847000, C257SE21043, C257SE21704

Reexamination Certificate

active

10907569

ABSTRACT:
A method of fabricating a structure and fabricating related semiconductor transistors and novel semiconductor transistor structures. The method of fabricating the structure includes: providing a substrate having a top surface; forming an island on the top surface of the substrate, a top surface of the island parallel to the top surface of the substrate, a sidewall of the island extending between the top surface of the island and the top surface of the substrate; forming a plurality of carbon nanotubes on the sidewall of the island; and performing an ion implantation, the ion implantation penetrating into the island and blocked from penetrating into the substrate in regions of the substrate masked by the island and the carbon nanotubes.

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Kotakoski et al. “Irradiation-Assisted Substitution of Carbon Atoms With Nitrogen and Boron in Single-Walled Carbon Nanotubes.” Nucl. Instr. and Meth. in Phys. Res. B. 228 (2005): 31-36.
Yun et al. “Fabrication of Metal Nanowire Using Carbon Nanotube As a Mask.” J. Vac. Sci. Technol. A. 18.4 (2000): 1329-1332.
Krasheninnikov et al. “Carbon Nanotubes As Masks Against Ion Irradiation: An Insight From Atomistic Simulations.” Appl. Phys. Lett. 81 (2002): 1101-1103.
Pomoell et al. “Stopping of Energetic Ions in Carbon Nanotubes.” Nucl. Instr. and Meth. in Phys. Res. B. 206 (2003): 18-21.
Kotakoski et al. “Irradiation-Assisted Substitution of Carbon Atoms With Nitrogen and Boron in Single-Walled Carbon Nanotubes.” Nucl. Instr. and Meth. in Phys. Res. B. 228 (2005): 31-36.

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