Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-11-27
2007-11-27
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
Reexamination Certificate
active
10984604
ABSTRACT:
A method of making a semiconductor device is described. That method comprises forming a conductive layer that contacts a via, such that the conductive layer includes a higher concentration of an electromigration retarding amount of a dopant near the via than away from the via.
REFERENCES:
patent: 5185294 (1993-02-01), Lam et al.
patent: 5324673 (1994-06-01), Fitch et al.
patent: 5614764 (1997-03-01), Baerg et al.
patent: 5904560 (1999-05-01), Brumley
patent: 5909635 (1999-06-01), Marieb et al.
patent: 6010933 (2000-01-01), Cherng
patent: 6077775 (2000-06-01), Stumberg et al.
patent: 6080663 (2000-06-01), Chen et al.
patent: 6191029 (2001-02-01), Hsiao et al.
patent: 6287961 (2001-09-01), Liu et al.
patent: 6297147 (2001-10-01), Yang et al.
patent: 6566262 (2003-05-01), Rissman et al.
patent: 63-38581 (1988-02-01), None
Hau-Riege Stefan
List R. Scott
Chen George
Harrison Monica D.
Intel Corporation
Jr. Carl Whitehead
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