Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface
Patent
1984-07-10
1987-05-12
Brammer, Jack P.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Forming nonplanar surface
430270, 430331, G03C 500
Patent
active
046650091
ABSTRACT:
The invention is directed to a method for obtaining a developer solvent for radiation-sensitive negative resists which are used in lithographic processes for the production of electronic microchips.
The negative resist polymer is applied to the surface of the microchip substrate directly, or through an appropriate bonding agent layer, in any conventional manner suitable to the particular polymer. Once the resist polymer coating is obtained on the substrate, the resist polymer is irradiated using a suitable radiation source to obtain a latent image therein. The latent image exists within the polymeric resist coating in the form of crosslinked polymer surrounded by areas of nonirradiated, non-crosslinked polymer which must be removed in order to develop the image, thus producing the desired resist pattern on the substrate.
Wet development of the image requires the use of solvents capable of dissolving away the non-crosslinked polymer while leaving a substantially undisturbed, undistorted crosslinked polymer image upon the substrate.
The present invention provides for use of a developer solvent comprised of a mixture of organic compounds, each of which, when applied singly, acts as a nonsolvent for such non-crosslinked polymer, but which, when applied as a mixture, works as a solvent.
Images developed using the developer solvents of the present invention are superior to images produced using development processes of the prior art in that swelling, profile distortion, surface erosion and line irregularity of the developed image are substantially eliminated.
REFERENCES:
patent: 3701657 (1972-10-01), Moore et al.
patent: 4267260 (1981-05-01), Miura et al.
patent: 4401745 (1983-08-01), Nakane et al.
patent: 4405708 (1983-09-01), Van Pelt et al.
Taniguchi et al, Japanese Journal of Applied Physics, vol. 18, No. 6, Jun. 1979, pp. 1143-1148.
Feit et al, J. Vac. Sci. Technology, 16(3), May/Jun., 1976, pp. 944-947.
Choong et al, J. Vac. Sci. Technology, vol. 19, No. 4, Nov./Dec. 1961, pp. 1121-1126.
Imamura et al, J. Electrochem. Soc., Sep. 1979, vol. 126-129, pp. 1629-1630.
Deb et al, Die Makromolekulare Chemie. 166 (1973) pp. 227-234.
Brammer Jack P.
Hughes Aircraft Company
Karambelas A. W.
LandOfFree
Method of developing radiation sensitive negative resists does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of developing radiation sensitive negative resists, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of developing radiation sensitive negative resists will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1802303