Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2006-08-23
2009-06-30
Le, Thoa X (Department: 2895)
Semiconductor device manufacturing: process
With measuring or testing
C438S010000, C438S015000, C438S689000, C438S706000, C438S710000, C438S712000, C438S714000, C438S715000, C156S345240, C156S345280, C156S345440, C156S345470, C257SE21252
Reexamination Certificate
active
07553679
ABSTRACT:
Plasma parameters such as plasma ion density, wafer voltage, etch rate and wafer current in the chamber are determined from external measurements on the applied RF bias electrical parameters such as voltage and current. The method includes sensing RF parameters corresponding to an input impedance, an input current and an input voltage at the input of the impedance match element to a transmission line coupled between the bias generator and the wafer pedestal. The method continues by computing a junction admittance of a junction between the transmission line and the electrode within the wafer pedestal from the input impedance, input current and input voltage and from parameters of the transmission line. The method further includes providing shunt electrical quantities of a shunt capacitance between the electrode and a ground plane, and providing load electrical quantities of a load capacitance between the electrode and a wafer on the pedestal. The method further includes computing at least one of the plasma parameters from the junction admittance, the shunt electrical quantities, the load electrical quantities and a frequency of RF bias power applied to the electrode.
REFERENCES:
patent: 2951960 (1960-09-01), Wastrous, Jr.
patent: 2967926 (1961-01-01), Edstrom
patent: 3355615 (1967-11-01), Bihan et al.
patent: 3610986 (1971-10-01), King
patent: 4458180 (1984-07-01), Sohval et al.
patent: 4464223 (1984-08-01), Gorin
patent: 4570106 (1986-02-01), Sohval et al.
patent: 4579618 (1986-04-01), Celestino et al.
patent: 4859908 (1989-08-01), Yoshida et al.
patent: 4888518 (1989-12-01), Grunwald
patent: 4973883 (1990-11-01), Hirose et al.
patent: 4990229 (1991-02-01), Campbell et al.
patent: 5006760 (1991-04-01), Drake, Jr.
patent: 5017835 (1991-05-01), Oechsner
patent: 5032202 (1991-07-01), Tsai et al.
patent: 5053678 (1991-10-01), Koike et al.
patent: 5055853 (1991-10-01), Garnier
patent: 5074456 (1991-12-01), Degner et al.
patent: 5077499 (1991-12-01), Oku
patent: 5089083 (1992-02-01), Kojima et al.
patent: 5107170 (1992-04-01), Ishikawa et al.
patent: 5115167 (1992-05-01), Ootera et al.
patent: 5122251 (1992-06-01), Campbell et al.
patent: 5134603 (1992-07-01), Baas
patent: 5140223 (1992-08-01), Gesche et al.
patent: 5175472 (1992-12-01), Johnson et al.
patent: 5195045 (1993-03-01), Keane et al.
patent: 5198725 (1993-03-01), Chen et al.
patent: 5210466 (1993-05-01), Collins et al.
patent: 5213658 (1993-05-01), Ishida
patent: 5218271 (1993-06-01), Egorov et al.
patent: 5223457 (1993-06-01), Mintz et al.
patent: 5225024 (1993-07-01), Hanley et al.
patent: 5246532 (1993-09-01), Ishida
patent: 5256931 (1993-10-01), Bernadet
patent: 5272417 (1993-12-01), Ohmi
patent: 5273610 (1993-12-01), Thomas, III et al.
patent: 5274306 (1993-12-01), Kaufman et al.
patent: 5279669 (1994-01-01), Lee
patent: 5280219 (1994-01-01), Ghanbari
patent: 5300460 (1994-04-01), Collins et al.
patent: 5314603 (1994-05-01), Sugiyama et al.
patent: 5325019 (1994-06-01), Miller et al.
patent: 5401351 (1995-03-01), Samukawa
patent: 5432315 (1995-07-01), Kaji et al.
patent: 5453305 (1995-09-01), Lee
patent: 5463525 (1995-10-01), Barnes et al.
patent: 5467013 (1995-11-01), Williams et al.
patent: 5474648 (1995-12-01), Patrick et al.
patent: 5512130 (1996-04-01), Barna et al.
patent: 5534070 (1996-07-01), Okamura et al.
patent: 5537004 (1996-07-01), Imahashi et al.
patent: 5554223 (1996-09-01), Imahashi
patent: 5556549 (1996-09-01), Patrick et al.
patent: 5567268 (1996-10-01), Kadomura
patent: 5576600 (1996-11-01), McCrary et al.
patent: 5576629 (1996-11-01), Turner et al.
patent: 5587038 (1996-12-01), Cecchi et al.
patent: 5592055 (1997-01-01), Capacci et al.
patent: 5595627 (1997-01-01), Inazawa et al.
patent: 5605637 (1997-02-01), Shan et al.
patent: 5618382 (1997-04-01), Mintz et al.
patent: 5627435 (1997-05-01), Jansen et al.
patent: 5654679 (1997-08-01), Mavretic et al.
patent: 5660671 (1997-08-01), Harada et al.
patent: 5661669 (1997-08-01), Mozumder et al.
patent: 5662770 (1997-09-01), Donohoe
patent: 5674321 (1997-10-01), Pu et al.
patent: 5685914 (1997-11-01), Hills et al.
patent: 5705019 (1998-01-01), Yamada et al.
patent: 5707486 (1998-01-01), Collins
patent: 5710486 (1998-01-01), Ye et al.
patent: 5720826 (1998-02-01), Hayashi et al.
patent: 5733511 (1998-03-01), De Francesco
patent: 5770922 (1998-06-01), Gerrish et al.
patent: 5792376 (1998-08-01), Kanai et al.
patent: 5846885 (1998-12-01), Kamata et al.
patent: 5849136 (1998-12-01), Mintz et al.
patent: 5849372 (1998-12-01), Annaratone et al.
patent: 5855685 (1999-01-01), Tobe et al.
patent: 5858819 (1999-01-01), Miyasaka
patent: 5863376 (1999-01-01), Wicker et al.
patent: 5866986 (1999-02-01), Pennington
patent: 5868848 (1999-02-01), Tsukamoto
patent: 5885358 (1999-03-01), Maydan et al.
patent: 5889252 (1999-03-01), Williams et al.
patent: 5904799 (1999-05-01), Donohoe
patent: 5914568 (1999-06-01), Nonaka
patent: 5929717 (1999-07-01), Richardson et al.
patent: 5936481 (1999-08-01), Fiji
patent: 5939886 (1999-08-01), Turner et al.
patent: 5942074 (1999-08-01), Lenz et al.
patent: 5971591 (1999-10-01), Vona et al.
patent: 5997962 (1999-12-01), Ogasawara et al.
patent: 6016131 (2000-01-01), Sato et al.
patent: 6043608 (2000-03-01), Samukawa et al.
patent: 6073577 (2000-06-01), Lilleland et al.
patent: 6089182 (2000-07-01), Hama
patent: 6093457 (2000-07-01), Okumura et al.
patent: 6095084 (2000-08-01), Shamouilian et al.
patent: 6096160 (2000-08-01), Kadomura
patent: 6106663 (2000-08-01), Kuthi et al.
patent: 6110395 (2000-08-01), Gibson, Jr.
patent: 6113731 (2000-09-01), Shan et al.
patent: 6142096 (2000-11-01), Sakai et al.
patent: 6152071 (2000-11-01), Akiyama et al.
patent: 6155200 (2000-12-01), Horiike et al.
patent: 6162709 (2000-12-01), Raoux et al.
patent: 6174450 (2001-01-01), Patrick et al.
patent: 6188564 (2001-02-01), Hao
patent: 6213050 (2001-04-01), Liu et al.
patent: 6218312 (2001-04-01), Collins et al.
patent: 6245190 (2001-06-01), Masuda et al.
patent: 6251216 (2001-06-01), Okamura et al.
patent: 6262538 (2001-07-01), Keller
patent: 6290806 (2001-09-01), Donohoe
patent: 6291999 (2001-09-01), Nishimori et al.
patent: 6337292 (2002-01-01), Kim et al.
patent: 6346915 (2002-02-01), Okumura et al.
patent: 6424232 (2002-07-01), Mavretic et al.
patent: 6449568 (2002-09-01), Gerrish
patent: 6451703 (2002-09-01), Liu et al.
patent: 6462481 (2002-10-01), Holland et al.
patent: 6528751 (2003-03-01), Hoffman et al.
patent: 6586886 (2003-07-01), Katz et al.
patent: 6652712 (2003-11-01), Wang et al.
patent: 6804572 (2004-10-01), Cooperberg et al.
patent: 6818097 (2004-11-01), Yamaguchi et al.
patent: 7138767 (2006-11-01), Chen et al.
patent: 7247218 (2007-07-01), Hoffman
patent: 2002/0026251 (2002-02-01), Johnson et al.
patent: 2002/0108933 (2002-08-01), Hoffman et al.
patent: 2002/0142493 (2002-10-01), Halliyal et al.
patent: 2003/0003757 (2003-01-01), Nallan et al.
patent: 2003/0168427 (2003-09-01), Flamm et al.
patent: 2004/0235304 (2004-11-01), Oh
patent: 2005/0151544 (2005-07-01), Mahoney et al.
patent: 2006/0144518 (2006-07-01), Kaji et al.
patent: 2006/0226786 (2006-10-01), Lin et al.
patent: 2006/0278609 (2006-12-01), Hoffman
patent: 2006/0278610 (2006-12-01), Hoffman
patent: 2006/0283835 (2006-12-01), Hoffman
patent: 2007/0029282 (2007-02-01), Hoffman
patent: 2007/0080137 (2007-04-01), Hoffman et al.
patent: 2007/0080138 (2007-04-01), Hoffman et al.
patent: 2007/0080139 (2007-04-01), Hoffman et al.
patent: 2007/0080140 (2007-04-01), Hoffman et al.
patent: 2007/0095788 (2007-05-01), Hoffman et al.
patent: 0 343 500 (1989-11-01), None
patent: 0 678 903 (1995-10-01), None
patent: 0 719 447 (1998-07-01), None
patent: WO 01/71765 (2001-09-01), None
King, Ronald W.P., “Transmission-Line Theory”, Dover Publications, Inc., 1965, New York, pp. 1-10 and 282-286.
Applied Materials Inc.
Law Office of Robert M. Wallace
Le Thoa X
Lee Kyoung
LandOfFree
Method of determining plasma ion density, wafer voltage,... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of determining plasma ion density, wafer voltage,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of determining plasma ion density, wafer voltage,... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4145381