Method of detecting defects of patterns on a semiconductor...

Image analysis – Applications – Manufacturing or product inspection

Reexamination Certificate

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C382S147000, C382S149000, C356S237100, C356S237400

Reexamination Certificate

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08055056

ABSTRACT:
In a method of detecting defects of patterns on a semiconductor substrate and an apparatus for performing the method information on positions of reference defects influencing an operation of a circuit including the patterns when the patterns are formed on the semiconductor substrate is acquired in advance. Preliminary defects of the patterns formed on the semiconductor substrate are detected. Positions of the preliminary defects of the patterns are compared with positions of the reference defects. The preliminary defects having the positions substantially the same as the positions of the reference defects are set to be defects of the patterns so that the actual defects are detected.

REFERENCES:
patent: 6724005 (2004-04-01), Tokumoto
patent: 6972576 (2005-12-01), Lyons et al.
patent: 7092095 (2006-08-01), Shibata et al.
patent: 7706597 (2010-04-01), Yoneyama et al.
patent: 7769225 (2010-08-01), Kekare et al.
patent: 06-036016 (1994-02-01), None
patent: 2002-131253 (2002-05-01), None
patent: 2005-195607 (2005-07-01), None

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