Method of detachable direct bonding at low temperatures

Details Method of detachable direct bonding at low temperatures Method of detachable direct bonding at low temperatures

2005-05-23

2008-12-09

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C257SE21567, C438S455000, C438S459000

Reexamination Certificate

active

07462552

ABSTRACT:
A method for detachable bonding that forms an amorphous silicon layer, or a silicon oxide layer with a high hydrogen content, on an element such as a carrier substrate. A second element, such as a substrate, is bonded to the amorphous silicon layer or silicon oxide layer, and the second element may then have a portion removed. A third element, such as a host or carrier substrate, is bonded to the second element or to the remaining portion of the second element to form a bonded structure. The bonded structure is then heated to cause the first element to detach from the bonded structure.

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