Method of depositing titanium nitride thin film and CVD depositi

Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized

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42725528, 4271261, 42725523, 427314, 438681, C23C 1600

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active

060804467

ABSTRACT:
A method for fabricating a titanium nitride thin film in a reaction vessel on a surface of a substrate heated to a prescribed temperature, includes the steps of mixing tetrakis(dialkylamino)titanium (TDAAT) and a first carrier gas to create a first mixed gas; feeding the first mixed gas into the reaction vessel through a first set of nozzles; mixing an added gas reactive with the tetrakis(dialkylamino)titanium with a second carrier gas to create a second mixed gas; feeding the second mixed gas into the reaction vessel through a second set of nozzles; while controlling the flow rates of the TDAAT, added gas, firt and second carrier gases; and depositing a titanium nitride thin film by the first mixed gas and the second mixed gas while confining the pressure inside the reaction vessel to a range of 0.1-15 Pa.

REFERENCES:
patent: 5672385 (1997-09-01), Jimba et al.
patent: 5763007 (1998-06-01), Weiller
Robert L. Jackson et al, "MOCVD of Titanium Nitride from TDEAT and NH3- Process Variables Affecting Step-coverage, Resistivity and Impurity Levels", Conference Proceedings ULSI-X 1995 Materials Research Society, pp. 223-229, No month data are available.
A. Intemann et al, "Applications and Properties of MOCVD Titanium Nitride", Conference Proceedings ULSI-X 1995 Materials Research Society, pp. 209-221, No month data are available.
Ivo J. Raaijmakers, "Low Temperature Metal-Organic Chemical Vapor Deposition Of Advanced Barrier Layers for the Microelectronics Industry", 1994--Elsevier Science S.A., pp. 85-93, No month data are available.

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