Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1996-10-03
1998-02-24
Beck, Shrive
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
427571, 427574, 427576, 4272551, 118723E, H05H 173, H05H 146, C23C 1606, C23C 1650
Patent
active
057210217
ABSTRACT:
A method of depositing a titanium-containing conductive thin film, which is capable of depositing a high-quality thin film having a low chlorine content by grounding, through a capacitor, a terminal of a plasma generating electrode disposed in a processing chamber. In the method, one of the introduction terminals of the plasma generating electrode is connected to a radio-frequency power source, the other terminal being grounded through the capacitor. Titanium tetrachloride, hydrogen gas, and nitrogen gas are introduced into the processing chamber at flowrates of 20 ml/min, 30 ml/min and 10 ml/min, respectively. The pressure in the processing chamber is set to about 1 Pa, and the temperature of the substrate is set to 450.degree. to 600.degree. C. A low-pressure, high-density plasma is generated with an output of the radio-frequency power source of 2.5 kW to deposit a titanium nitride film at a rate of about 30 nm/min. The resultant titanium nitride film has a chlorine content of 1% or less, metallic lustre and low resistance.
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Sasaki Masao
Sekiguchi Atsushi
Takagi Ken-ichi
Tobe Ryoki
Anelva Corporation
Beck Shrive
Chen Bret
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