Method of depositing thin film using hafnium compound

Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C427S255310, C427S255700

Reexamination Certificate

active

10712876

ABSTRACT:
A method of depositing a thin film using a hafnium compound includes depositing a primary thin film and depositing a secondary thin film. The depositing of the primary thin film and the depositing of the secondary thin film are repeated once or more. The depositing of the primary thin film includes feeding a first reactive gas, purging the first reactive gas, feeding a third reactive gas, and purging the third reactive gas, and repeating the aforementioned steps a first plurality of (N) times. The feeding of the first reactive gas includes feeding a second reactive gas, purging the second reactive gas, feeding the third reactive gas, and purging the third reactive gas, and repeating the aforementioned steps a second plurality of (M) times.

REFERENCES:
patent: 6348373 (2002-02-01), Ma et al.
patent: 6780476 (2004-08-01), Horikawa
patent: 6784507 (2004-08-01), Wallace et al.
patent: 6852194 (2005-02-01), Matsushita et al.
patent: 6982230 (2006-01-01), Cabral et al.
patent: 2003/0101938 (2003-06-01), Ronsse et al.
patent: 2003/0232501 (2003-12-01), Kher et al.
patent: 2005/0064207 (2005-03-01), Senzaki et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of depositing thin film using hafnium compound does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of depositing thin film using hafnium compound, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of depositing thin film using hafnium compound will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3774280

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.