Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-11-28
2010-11-30
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S072000, C438S952000, C257S437000, C257SE21029
Reexamination Certificate
active
07842606
ABSTRACT:
Disclosed herein are a method of depositing a thin film and a method of manufacturing a semiconductor using the same, having high selectivity by increasing etching resistance while an extinction coefficient associated with anti-reflectivity is maintained low. The method of depositing a thin film according to the invention includes (a) depositing an carbon anti-reflective film on the bottom film of a substrate; and (b) adding a compound containing nitrogen (N), fluorine (F) or silicon (Si) to the surface or the inner portion of the carbon anti-reflective film, to deposit a thin film of a-C:N, a-C:F or a-C:Si, having high selectivity, to a thickness from 1 to 100 nm using an atomic layer deposition process. Therefore, an ultrathin film having etching resistance is formed on or in the carbon anti-reflective film and the density and compressive stress of the carbon anti-reflective film are increased, thus increasing etching selectivity.
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International Search Report; PCT/KR2005/004012; Mar. 28, 2006.
Written Opinion; PCT/KR2005/004012; Mar. 28, 2006.
International Preliminary Report on Patentability; PCT/KR2005-004012; Mar. 22, 2007.
All the reference cited in the Search Report, Written Opinion and Preliminary Report are listed above.
Chang Ho Seung
Lee Ki Hoon
Lee Sahng Kyoo
Park Young Hoon
Seo Tae Wook
Dehne Aaron A
Integrated Process Systems Ltd
Kile Park Goekjian Reed & McManus PLLC
Nguyen Ha Tran T
Park Jae Y.
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