Method of depositing thin film and method of manufacturing...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S072000, C438S952000, C257S437000, C257SE21029

Reexamination Certificate

active

07842606

ABSTRACT:
Disclosed herein are a method of depositing a thin film and a method of manufacturing a semiconductor using the same, having high selectivity by increasing etching resistance while an extinction coefficient associated with anti-reflectivity is maintained low. The method of depositing a thin film according to the invention includes (a) depositing an carbon anti-reflective film on the bottom film of a substrate; and (b) adding a compound containing nitrogen (N), fluorine (F) or silicon (Si) to the surface or the inner portion of the carbon anti-reflective film, to deposit a thin film of a-C:N, a-C:F or a-C:Si, having high selectivity, to a thickness from 1 to 100 nm using an atomic layer deposition process. Therefore, an ultrathin film having etching resistance is formed on or in the carbon anti-reflective film and the density and compressive stress of the carbon anti-reflective film are increased, thus increasing etching selectivity.

REFERENCES:
patent: 5227196 (1993-07-01), Itoh
patent: 6428894 (2002-08-01), Babich et al.
patent: 6573030 (2003-06-01), Fairbairn et al.
patent: 7084071 (2006-08-01), Dakshina-Murthy et al.
patent: 2003/0219988 (2003-11-01), Shan et al.
patent: 2005/0202683 (2005-09-01), Wang et al.
patent: 2007/0116888 (2007-05-01), Faguet
patent: 1999019538 (1999-03-01), None
International Search Report; PCT/KR2005/004012; Mar. 28, 2006.
Written Opinion; PCT/KR2005/004012; Mar. 28, 2006.
International Preliminary Report on Patentability; PCT/KR2005-004012; Mar. 22, 2007.
All the reference cited in the Search Report, Written Opinion and Preliminary Report are listed above.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of depositing thin film and method of manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of depositing thin film and method of manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of depositing thin film and method of manufacturing... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4247852

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.