Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-07-18
2006-07-18
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S681000, C438S683000, C427S250000, C427S255120, C427S255120
Reexamination Certificate
active
07078341
ABSTRACT:
A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process. The TCVD process utilizes high flow rate of a dilute process gas containing a metal-carbonyl precursor to deposit a metal layer. In one embodiment of the invention, the metal-carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12. In another embodiment of the invention, a method is provided for depositing a W layer from a process gas comprising a W(CO)6precursor at a substrate temperature of about 410° C. and a chamber pressure of about 200 mTorr.
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Gomi Atsushi
Hatano Tatsuo
Kawano Yumiko
Leusink Gert J
Malhotra Sandra G.
Berry Renee R.
International Business Machines - Corporation
Nelms David
Pillsbury Winthrop Shaw & Pittman LLP
Tokyo Electron Limited
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