Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-01-15
2008-01-15
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S623000, C438S789000, C257SE21166, C257SE21274, C257SE21277, C257SE21576
Reexamination Certificate
active
07319068
ABSTRACT:
A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials.
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Xia Li-Qun
Xu Ping
Yang Louis
Applied Materials Inc.
Ghyka Alexander
Patterson & Sheridan
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