Data processing: generic control systems or specific application – Specific application – apparatus or process – Product assembly or manufacturing
Reexamination Certificate
2007-04-03
2007-04-03
Meeks, Timothy (Department: 1762)
Data processing: generic control systems or specific application
Specific application, apparatus or process
Product assembly or manufacturing
C430S313000, C430S314000, C430S316000, C427S577000, C427S249150, C427S255290
Reexamination Certificate
active
10375793
ABSTRACT:
A method of forming a silicon carbide layer for use in integrated circuits is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a nitrogen source in the presence of an electric field. The as-deposited silicon carbide layer incorporates nitrogen therein from the nitrogen source.
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Campana Francimar
Chapin Michael
Nemani Srinivas
Venkataraman Shankar
Applied Materials Inc.
Patterson & Sheridan
Turocy David
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