Method of depositing film for semiconductor device in single waf

Details Method of depositing film for semiconductor device in single waf Method of depositing film for semiconductor device in single waf

1998-11-03

2000-10-17

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438763, 438907, H01L 2144, H01L 2131

Patent

active

061331481

ABSTRACT:
A method of depositing a thin film for a semiconductor device using a lamp heating type apparatus. In the method, a wafer is loaded into a processing chamber of the apparatus, and the pressure of the chamber and the temperature of a susceptor installed in the chamber are increased to a level higher than a deposition pressure and a deposition temperature, respectively. Then, the pressure of the chamber and the temperature of the susceptor are decreased to the deposition pressure and the deposition temperature, respectively, and a film is deposited on the wafer. The vacuum of the chamber is then released and the gas remaining in the chamber and a source gas injection tube is purged.

REFERENCES:
patent: 4587710 (1986-05-01), Tsao
patent: 4629635 (1986-12-01), Brors

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