Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2006-10-31
2006-10-31
Norton, Nadine (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S752000, C438S756000
Reexamination Certificate
active
07129184
ABSTRACT:
A method of preparing a silicon layer or substrate surface for growing an epitaxial layer of SiGe thereon. The process comprises removing native oxide from the surface of the silicon with an HF solution, and then oxidizing the exposed silicon surface to form a chemically formed layer of silicon oxide of the process damaged silicon surface. The chemically formed layer of silicon oxide is then removed by a second HF cleaning process so as to leave a smooth silicon surface suitable for growing a SiGe layer.
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Chang Chih-Chien
Chen Shih-Chang
Lee Tze-Liang
Lin Shun Wu
Tsai Pang-Yen
Norton Nadine
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
Tran Binh X.
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