Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-02-01
2005-02-01
Gurley, Lynne A. (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S780000, C438S786000, C438S788000, C438S789000, C438S790000, C438S791000, C438S792000, C438S793000, C438S794000, C257S758000, C257S759000, C257S760000
Reexamination Certificate
active
06849562
ABSTRACT:
A method for depositing a low k dielectric film comprising silicon, carbon, and nitrogen is provided. The low k dielectric film is formed by a gas mixture comprising a silicon source, a carbon source, and NR1R2R3, wherein R1, R2, and R3are selected from the group consisting of alkyl and phenyl groups. The low k dielectric film may be used as a barrier layer, an etch stop, an anti-reflective coating, or a hard mask.
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Lang Chi-I
Xia Li-Qun
Xu Ping
Yang Louis
Applied Materials Inc.
Moser Patterson & Sheridan
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