Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2007-03-28
2010-06-29
Nguyen, Thanh (Department: 2893)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S486000, C438S487000, C257SE21297
Reexamination Certificate
active
07745314
ABSTRACT:
A method of degassing a thin layer and a method of manufacturing a silicon thin film includes applying microwaves to a silicon thin film deposited on a substrate to induce a resonance of impurities of H2, Ar, He, Xe, O2, and the like present in the silicon thin film so as to remove the impurities from the silicon thin film. A wavelength of the microwaves is equal to a natural frequency of an element of an object to be removed. According to a resonance of impurities induced by microwaves, the impurities can be very effectively removed from the silicon thin film so as to obtain a high quality silicon thin film. In particular, the microwaves are very suitable to be used in the manufacture of silicon thin films at low temperature.
REFERENCES:
patent: 6133076 (2000-10-01), Yamazaki et al.
Jung Ji-sim
Kim Jong-man
Kwon Jang-yeon
Park Kyung-bae
Cantor & Colburn LLP
Nguyen Thanh
Samsung Electronics Co,. Ltd.
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