Method of deforming a trench by a thermal treatment

Details Method of deforming a trench by a thermal treatment Method of deforming a trench by a thermal treatment

1998-06-29

2000-08-08

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438244, 438246, 438247, 438386, 438387, 438389, 438390, 438909, H01L 218242

Patent

active

061001325

ABSTRACT:
A semiconductor device includes a semiconductor substrate having a trench on a surface thereof and an embedding member embedding the interior of the trench therewith. While the section of the trench when cut by a first plane perpendicular to the direction of the depth of the trench is defined as a first section and the section of the trench when cut by a second plane perpendicular to the direction of the depth of the trench and closer to the bottom of the trench than the first plane is defined as a second section, the area of the first section is smaller than that of the second section and a minimum radius of curvature of the first section is smaller than a minimum radius of curvature of the second section. As a result, it is possible to lessen the concentration of the electric field into the bottom of the trench.

REFERENCES:
patent: 5112771 (1992-05-01), Ishii et al.
patent: 5256566 (1993-10-01), Bailey
patent: 5629226 (1997-05-01), Ohtsuki
patent: 6025245 (2000-02-01), Wei

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