Method of CVD for forming silicon nitride film on substrate

Details Method of CVD for forming silicon nitride film on substrate Method of CVD for forming silicon nitride film on substrate

2006-08-22

2006-08-22

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

Reexamination Certificate

active

07094708

ABSTRACT:
A CVD method is to form a silicon nitride film on a target substrate (W). The method includes heating the substrate (W) accommodated in a process container (8), at a process temperature, and supplying a process gas including hexaethylamino-disilane gas and ammonia gas onto the substrate (W) heated at the process temperature, thereby depositing a silicon nitride film on the substrate (W).

REFERENCES:
patent: 6475902 (2002-11-01), Hausmann et al.
patent: 2005/0095770 (2005-05-01), Kumagai et al.
patent: 7-273106 (1995-10-01), None
patent: 11-172439 (1999-06-01), None
patent: 03 046253 (2003-06-01), None

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