Semiconductor device manufacturing: process – Semiconductor substrate dicing – By electromagnetic irradiation
Reexamination Certificate
2007-09-04
2007-09-04
Lee, Calvin (Department: 2818)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
By electromagnetic irradiation
Reexamination Certificate
active
11174710
ABSTRACT:
A method of cutting an integrated circuit chip from a wafer having a plurality of integrated circuit chips is provided. An upper portion of the wafer is ablated using two laser beams to form two substantially parallel trenches that extend into the wafer from a top surface of the wafer through intermetal dielectric layers and at least partially into a substrate of the wafer. After the ablating to form the two trenches, cutting through the wafer between outer sidewalls of the two laser-ablated trenches with a saw blade is performed. A width between the outer sidewalls of the two laser-ablated trenches is greater than a cutting width of the saw blade. This may be particularly useful in lead-free packaging applications and/or applications where the intermetal dielectric layers use low-k dielectric materials, for example.
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Lee, J.-M., et a., “Scribing and cutting of sapphire wafer with Q-switched Nd: YAG laser,” CLEO Pacific Rim '99, IEEE, pp. 366-367.
Lee, J.-M., et al., “Scribing and cutting of sapphire wafer with Q-switched Nd: YAG laser,” CLEO Pacific Rim, IEEE, pp. 366-367, 1999.
Lee Hsin-Hui
Lii Mirng-Ji
Lu Szu Wei
Sung Ming-Chung
Lee Calvin
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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