Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-05-04
2008-11-04
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE27099
Reexamination Certificate
active
07445977
ABSTRACT:
A method for achieving a substantially defect free SGOI substrate which includes a SiGe layer that has a high Ge content of greater than about 25 atomic % using a low temperature wafer bonding technique is described. The wafer bonding process described in the present application includes an initial prebonding annealing step that is capable of forming a bonding interface comprising elements of Si, Ge and O, i.e., interfacial SiGeO layer, between a SiGe layer and a low temperature oxide layer. The present invention also provides the SGOI substrate and structure that contains the same.
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Chu Jack O.
Cobb Michael A.
Saunders Philip A.
Shi Leathen
International Business Machines - Corporation
Le Thao P.
Scully , Scott, Murphy & Presser, P.C.
Trepp, Esq. Robert M.
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