Method of cooling a wafer support at a uniform temperature...

Coating apparatus – Gas or vapor deposition – With treating means

Reexamination Certificate

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C118S725000, C156S345270

Reexamination Certificate

active

08034180

ABSTRACT:
A method of controlling the temperature of a workpiece on a workpiece support in a plasma reactor includes placing coolant in a flow channel thermally coupled to the workpiece support, supporting a thermally conductive gas between the workpiece and the workpiece support to establish a backside gas pressure, providing sensors to measure the temperature of the workpiece support and the workpiece, and determining whether the rate of change in workpiece temperature is less or more than a rate limited by a thermal mass of the workpiece support. If the rate is less or equal, the thermal conditions of the coolant in the flow channel are changed to reduce a difference between the measured workpiece support temperature and a target workpiece support temperature. If the rate is more, the pressure of the thermally conductive gas is changed to reduce a difference between the measured workpiece temperature and a target workpiece temperature.

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