Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Plasma
Reexamination Certificate
2004-09-06
2010-02-23
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Plasma
C438S005000, C438S014000, C438S510000, C257SE21525
Reexamination Certificate
active
07666770
ABSTRACT:
A method is provided for controlling a dose amount of dopant to be doped into an object to be processed in plasma doping. According to the method, the doping control is formed of the following processes: determining the temperature of the object, the amount of ions having dopant in plasma that collide with the object, and types of gases in plasma during doping; calculating a dose amount by neutral gas according to the temperature of the object, and a dose amount by ions from the determined amount of ions containing dopant that collide with the object; and carrying out doping so that the sum of the dose amount by neutral gas and the dose amount by ions equal to a predetermined dose amount.
REFERENCES:
patent: 6020592 (2000-02-01), Liebert et al.
patent: 6514838 (2003-02-01), Chan
patent: 2004/0107909 (2004-06-01), Collins et al.
patent: 6-37030 (1994-02-01), None
patent: 2000-114198 (2000-04-01), None
patent: 2000-332252 (2000-11-01), None
Steve Walther et al., “Implant Dosimetry Results for Plasma Doping”, 2000 IEEE, pp. 492-495.
Maeshima Satoshi
Nakayama Ichiro
Okumura Tomohiro
Sasaki Yuichiro
Novacek Christy L
Panasonic Corporation
Smith Zandra
Wenderoth , Lind & Ponack, L.L.P.
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