Method of controlling film thinning of semiconductor wafer...

Details Method of controlling film thinning of semiconductor wafer... Method of controlling film thinning of semiconductor wafer...

2011-06-14

2011-06-14

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE27133

Reexamination Certificate

active

07960225

ABSTRACT:
The thickness of a semiconductor wafer layer, extending from a mirror-finished surface thereof to a solid-state image sensing device, is measured. Based on the residual thickness data, plasma etching is performed from the mirror-finished surface until a predetermined thickness is reached by controlling the plasma etching amount. By doing this, it is possible to reduce variation in the thickness of the solid-state image sensing device at low cost without causing an increase in the number of processes.

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