Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-10-11
2005-10-11
Pham, Hoai (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S155000
Reexamination Certificate
active
06953715
ABSTRACT:
A method of controlling the capacitance of a thin film transistor liquid crystal display (TFT-LCD) storage capacitor is disclosed. In certain embodiments, the method includes i) forming an undoped amorphous silicon layer on a silicon nitride layer, ii) forming an etching mask on the undoped amorphous silicon layer, and iii) forming two doped amorphous silicon layers on portion of the undoped amorphous silicon layer and the etching mask, the two doped amorphous silicon layers being spaced apart and located on either side of the gate, wherein an etching selectivity ratio of the undpoed and doped amorphous silicon layers over the dielectric layer being not less than about 5.0.
REFERENCES:
patent: 5905274 (1999-05-01), Ahn et al.
patent: 5917564 (1999-06-01), Kim et al.
patent: 6485997 (2002-11-01), Lee et al.
patent: 6649933 (2003-11-01), Wong
Chu Chun-Hung
Chuang Ta-Ko
Hsiao Chian-Chih
Lin Chih-Lung
Lin Chin-Mao
HannStar Display Corporation
Knobbe Martens Olson & Bear LLP
Pham Hoai
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