Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-08-08
2006-08-08
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S239000, C257SE21477
Reexamination Certificate
active
07087469
ABSTRACT:
A method of controlling the capacitance of a thin film transistor liquid crystal display (TFT-LCD) storage capacitor is disclosed. In certain embodiments, the method includes i) forming a silicon island and a bottom electrode on the transparent substrate, the silicon island having an undoped region located on the central portion, and two doped regions respectively located on both sides, ii) forming a first silicon nitride layer on the transparent substrate, and iii) forming a stacked layer comprising a second silicon nitride layer and a conductive layer on the undoped region of the silicon island, and the first conductive layer of the stacked layer serving as a gate of a thin film transistor, wherein an etching selectivity ratio of the conductive layer over the dielectric layer is not less than about 5.0.
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Chu Chun-Hung
Chuang Ta-Ko
Hsiao Chian-Chih
Lin Chih-Lung
Lin Chin-Mao
Hannstar Display Corp.
Isaac Stanetta
Lebentritt Michael
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