Method of controllably forming a LOCOS oxide layer over a portio

Details Method of controllably forming a LOCOS oxide layer over a portio Method of controllably forming a LOCOS oxide layer over a portio

1998-07-01

2000-11-28

Everhart, Caridad

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438242, 438243, 438244, 438245, 438268, 438259, H01L 21336

Patent

active

061534749

ABSTRACT:
The present invention includes a method and system to increase the deep trench sidewall surface area in a storage node on a DRAM chip. By tilting the trenches the capacitance is increased without taking up more space on the semiconductor chip.

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