Method of compensating for proximity effects in electron-beam li

Details Method of compensating for proximity effects in electron-beam li Method of compensating for proximity effects in electron-beam li

1979-12-10

1981-04-28

Louie, Jr., Won H.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

430942, G03C 500

Patent

active

042647118

ABSTRACT:
In the process of constructing microelectronic circuits on a semiconductor chip, electron-beam lithography is utilized to fabricate high resolution resist patterns. The resolution however, is limited by proximity effects which are due to scattering of the electron-beam as it passes through the resist. In the disclosed method, those proximity effects are compensated for by making the energy that is absorbed by the resist from the electrons, substantially greater at the perimeter of each shape in the pattern than at the interior of those shapes.

REFERENCES:
patent: 3681103 (1972-08-01), Brown
patent: 3971860 (1976-07-01), Broers et al.
H. Sewell, Journal Vacuum Science and Technology, vol. 15, No. 3, pp. 927-930, May/Jun. 1978.
M. Parikh, Journal Vacuum Science and Technology, vol. 15, No. 3, pp. 931-933, May/Jun. 1978.

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