Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-05-22
2007-05-22
Lindsay, Jr., Walter (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S745000, C257SE21316, C257SE21290, C257SE21277
Reexamination Certificate
active
11050261
ABSTRACT:
A method of cleaning a wafer, adapted for a patterned gate structure. The gate structures comprise a gate dielectric layer, a nitrogen-containing barrier layer and a silicon-containing gate layer sequentially stacked over the substrate. The method includes cleaning the substrate with phosphoric acid solution and hydrofluoric acid solution so that silicon nitride residues formed in a reaction between the nitrogen-containing barrier layer and the silicon-containing gate layer can be removed and the amount of pollutants and particles can be reduced. Ultimately, the yield of the process as well as the quality and reliability of the device are improved.
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Lee Charlie C J
Liao Kuan-Yang
Wu Chih-Ning
Dinh Thu-Huong
J.C. Patents
Lindsay, Jr. Walter
United Microelectronics Corp.
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