Method of cleaning residue on a semiconductor wafer bonding pad

Details Method of cleaning residue on a semiconductor wafer bonding pad Method of cleaning residue on a semiconductor wafer bonding pad

1995-09-05

1998-03-24

Graybill, David

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438669, 438691, 438694, 438745, 438759, 438780, H01L 2128, H01L 21304, H01L 213065

Patent

active

057312435

ABSTRACT:
A method for backside grinding a semiconductor wafer and forming a contamination free bonding pad connection. The method comprises forming a passivation layer over a metal layer. Applying a photoresist pattern with an opening which will define a bonding pad area and removing the passivation layer exposed in the opening. Next, the photoresist is removed, but a polymer residue is often formed on the surfaces of the passivation layer surrounding the bonding pad. In a novel step, the residue is removed using an etchant containing Dimethylsulfoxide (D.M.D.O.) aud Monoethanolamine (M.E.A.) and is followed by au oxygen plasma treatment. Next, the device side of the wafer is covered with a protective tape and the backside of the wafer is grouud back. The tape is removed revealing a contamination free bonding pad area. A bonding connection is then made to the bonding pad.

REFERENCES:
patent: 4587771 (1986-05-01), Buchner et al.
patent: 5300172 (1994-04-01), Ishiwata et al.
patent: 5366589 (1994-11-01), Chang
patent: 5480842 (1996-01-01), Clifton et al.
patent: 5545076 (1996-08-01), Yun et al.

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