Method of cleaning a semiconductor processing chamber

Details Method of cleaning a semiconductor processing chamber Method of cleaning a semiconductor processing chamber

2005-01-18

2005-01-18

Kornakov, M. (Department: 1746)

Cleaning and liquid contact with solids

Processes

Using sequentially applied treating agents

C134S001100, C134S022100, C134S022180, C134S026000, C134S031000, C134S902000, C216S063000, C216S064000, C216S067000, C216S068000, C438S905000

Reexamination Certificate

active

06843858

ABSTRACT:
A method of operating a substrate processing chamber. In one embodiment the method includes processing one or more substrates in the substrate processing chamber and subsequently cleaning the chamber using a dry cleaning process. This substrate processing and dry cleaning sequence is then repeated multiple times before chamber is further cleaned by flowing a cleaning gas into the chamber and forming a plasma within the chamber from the cleaning gas in an extended cleaning process. During the extended cleaning process the plasma is maintained within the chamber for a total of at least 5 minutes before the chamber is reused to process a substrate.

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