Method of chemical mechanical planarization using copper coordin

Details Method of chemical mechanical planarization using copper coordin Method of chemical mechanical planarization using copper coordin

1997-11-03

2000-08-01

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

216 37, 216 89, 216105, 252 794, 438693, 438754, H01L 2100

Patent

active

060966521

ABSTRACT:
A method of CMP of the semiconductor device where the method comprises the sequential steps of providing a semiconductor device, forming a copper layer on the semiconductor device and planarizing the copper layer with a medium. The medium comprises an abrasive component and a chemical solution. The chemical solution comprises water, an oxidizing agent, a first coordinating ligand adapted to form a complex with Cu(I) and a second coordinating ligand adapted to form a complex with Cu(II).

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