Method of chemical mechanical planarization using a water rinse

Details Method of chemical mechanical planarization using a water rinse Method of chemical mechanical planarization using a water rinse

1997-08-29

2000-06-06

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438693, H01L 21302

Patent

active

060718161

ABSTRACT:
A method of chemical mechanical planarization of a semiconductor device provides a semiconductor device having a device front surface and a device back surface with the device front surface being a top surface of a second metal layer. A first planarizing step planarizes the device front surface with a first medium to expose a device second front surface, where the first medium comprises a first abrasive component and a first chemical solution. A rinsing step then rinses the device back surface with water. A second planarizing step then planarizes the device second front surface with a second medium where the second medium comprises a second abrasive component and a second chemical solution.

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Aoki, et al., "Novel Electrolysis-Ionized Water Cleaning Technique for the Chemical-Mechanical Polishing (CMP) Process, "1994 Symposium on VLSI Technology Digest of Technical Pages, IEEE, pp. 79-80 (1994).
Kaufman, et al., "Chemical-Mechanical Polishing for Fabrication Patterened W Metal Features as Chip Interconnects, "J. Electrochem Soc., pp. 3460-3464 (1991)

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