Method of checking defects in patterns formed on photo masks

Details Method of checking defects in patterns formed on photo masks Method of checking defects in patterns formed on photo masks

1996-05-31

1997-07-22

Gonzalez, Frank

Optics: measuring and testing

By configuration comparison

With comparison to master, desired shape, or reference voltage

356237, 356239, G01B 1100

Patent

active

056508549

ABSTRACT:
Disclosed is a patten defect checking method which is affected neither by the presence of a correction pattern or an auxiliary pattern nor by the waveguide effect and which makes it always possible to reliably detect any defect in a pattern formed on a photo mask regardless of the type of photo mask. In the method for checking defects in a pattern formed on a photo mask, the light intensity distribution due to the light transmitted through the photo mask is compared with a light intensity distribution calculated on the basis of pattern data, whereby any defect in the pattern formed on the photo mask is detected.

REFERENCES:
patent: 4218142 (1980-08-01), Kryger et al.
patent: 4247203 (1981-01-01), Levy et al.
patent: 4926489 (1990-05-01), Danielson et al.

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