Method of characterizing a chamber based upon concurrent...

Details Method of characterizing a chamber based upon concurrent... Method of characterizing a chamber based upon concurrent...

2006-12-11

2008-11-18

Vinh, Lan (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S009000, C438S706000, C216S059000

Reexamination Certificate

active

07452824

ABSTRACT:
The invention involves a method of characterizing a plasma reactor chamber through the behavior of many selected plasma parameters as functions of many selected chamber parameters. The plasma parameters may be selected from a group including ion density, wafer voltage, etch rate and wafer current or other plasma parameters. The chamber parameters are selected from a group including source power, bias power, chamber pressure, magnetic coil current in different magnetic coils, gas flow rates in different gas injection zones and species composition of the gas in different gas injection zones.

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