Method of breaking down a fuse in a semiconductor device

Details Method of breaking down a fuse in a semiconductor device Method of breaking down a fuse in a semiconductor device

2007-02-20

2007-02-20

Dinh, Son T. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Having fuse element

C361S111000

Reexamination Certificate

active

11015030

ABSTRACT:
A semiconductor device has: a fuse having one end applied with a first voltage, and a MOS transistor having source, gate and drain and a connection point between the other end of the fuse and one of the source and drain, a second voltage lower than the first voltage applied to the other of the source and drain, wherein: the first and second voltages, characteristics of the MOS transistor and a resistance of the fuse are selected so that the fuse can be broken down when a predetermined program voltage is applied to the gate; and the resistance of the fuse is set to such a value as a voltage difference between a voltage at the connection point and the second voltage is lower than a drain voltage of the MOS transistor at which a drain current starts saturating, when the program voltage is applied to the gate.

REFERENCES:
patent: 4441167 (1984-04-01), Principi et al.
patent: 5172337 (1992-12-01), Iwase et al.
patent: 5661323 (1997-08-01), Choi et al.
patent: 5696659 (1997-12-01), Maruo
patent: 5712588 (1998-01-01), Choi et al.
patent: 63-299139 (1988-12-01), None
Abstract of Japanese Patent Publication No. JP 07-307389.
Abstract of Japanese Patent JP 2000040790.
Abstract of Japanese Patent JP 6021228.
European Search Report issued Mar. 27, 2006.

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