Method of bonding a semiconductor die without an ESD circuit...

Details Method of bonding a semiconductor die without an ESD circuit... Method of bonding a semiconductor die without an ESD circuit...

2005-08-23

2005-08-23

Clark, Jasmine J (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Flip chip

C257S723000, C257S672000, C257S173000, C438S110000, C438S014000, C438S015000

Reexamination Certificate

active

06933610

ABSTRACT:
In a semiconductor device having a semiconductor die without an ESD circuit and a separate ESD circuit and an external lead, the external lead is first bonded to the separate ESD circuit. Thereafter, the separate ESD circuit is bonded to the semiconductor die. As a result, in the process of bonding the semiconductor die, any ESD disturbance is absorbed by the ESD circuit. In addition, a semiconductor device such as a DDR DRAM memory device, has a chip carrier with a first surface having a plurality of leads and a second surface opposite to it with an aperture between them. A semiconductor die with a mounting surface and a bonding pad faces the second surface with the bonding pad in the aperture. An ESD circuit is mounted on the mounting surface in the aperture. A first electrical connector connects one of a plurality of leads to the ESD circuit and a second electrical connector connects the ESD circuit to the bonding pad.

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