Method of base formation in a BiCMOS process

Details Method of base formation in a BiCMOS process Method of base formation in a BiCMOS process

2005-04-06

2009-12-01

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S234000, C257SE21382

Reexamination Certificate

active

07625792

ABSTRACT:
Disclosed is a bipolar complementary metal oxide semiconductor (BiCMOS) or NPN/PNP device that has a collector, an intrinsic base above the collector, shallow trench isolation regions adjacent the collector, a raised extrinsic base above the intrinsic base, a T-shaped emitter above the extrinsic base, spacers adjacent the emitter, and a silicide layer that is separated from the emitter by the spacers.

REFERENCES:
patent: 4682409 (1987-07-01), Thomas et al.
patent: 4808548 (1989-02-01), Thomas et al.
patent: 5017990 (1991-05-01), Chen et al.
patent: 5106767 (1992-04-01), Comfort et al.
patent: 5107321 (1992-04-01), Ilderem et al.
patent: 5144403 (1992-09-01), Chiang et al.
patent: 5290716 (1994-03-01), Nakamura et al.
patent: 5439833 (1995-08-01), Hebert et al.
patent: 5580798 (1996-12-01), Grubisich
patent: 5599723 (1997-02-01), Sato
patent: 5607866 (1997-03-01), Sato et al.
patent: 5661046 (1997-08-01), Ilderem et al.
patent: 5854097 (1998-12-01), Ohmi et al.
patent: 5940711 (1999-08-01), Zambrano
patent: 5953600 (1999-09-01), Gris
patent: 5986323 (1999-11-01), Zambrano et al.
patent: 5986326 (1999-11-01), Kato
patent: 6028345 (2000-02-01), Johnson
patent: 6316818 (2001-11-01), Marty et al.
patent: 6465317 (2002-10-01), Marty
patent: 6492238 (2002-12-01), Ahlgren et al.
patent: WO 99/52138 (1999-10-01), None
patent: PCT/US2005/011711 (2005-04-01), None
European Search Report dated Sep. 22, 2008 for EP Application No. 05736453.1 filed on Apr. 6, 2005.

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