Method of avoiding plasma arcing during RIE etching

Details Method of avoiding plasma arcing during RIE etching Method of avoiding plasma arcing during RIE etching

2007-07-24

2007-07-24

Alanko, Anita (Department: 1765)

Etching a substrate: processes

Gas phase etching of substrate

Irradiating, ion implanting, alloying, diffusing, or...

C216S067000, C216S079000, C216S080000, C438S723000, C438S734000

Reexamination Certificate

active

10175613

ABSTRACT:
A method for avoiding plasma arcing during a reactive ion etching (RIE) process including providing a semiconductor wafer having a process surface for depositing a dielectric insulating layer; depositing at least a portion of a dielectric insulating layer to form a deposition layer according to plasma assisted chemical vapor deposition (CVD) process; treating the deposition layer portion with a hydrogen plasma treatment to reduce an electrical charge nonuniformity of the deposition layer including applying a biasing power to the semiconductor wafer; and, carrying out a subsequent reactive ion etching process.

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