Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-06-27
2006-06-27
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S356000, C257S362000
Reexamination Certificate
active
07067886
ABSTRACT:
A method and structure alters an integrated circuit design having silicon over insulator (SOI) transistors. The method/structure prevents damage from charging during processing to the gate of SOI transistors by tracing electrical nets in the integrated circuit design, identifying SOI transistors that have a voltage differential between the source/drain and gate as potentially damaged SOI transistors (based on the tracing of the electrical nets), and connecting a shunt device across the source/drain and the gate of each of the potentially damaged SOI transistors. Alternatively, the method/structure provides for connecting compensating conductors through a series device.
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Bonges, III Henry A.
Harmon David L.
Hook Terence B.
Lai Wing L.
International Business Machines - Corporation
Kotulak, Esq. Richard M.
McGinn & Gibb PLLC
Ngo Ngan V.
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