Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-11-07
2006-11-07
Ngô, Ngân V. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S266000, C438S275000
Reexamination Certificate
active
07132318
ABSTRACT:
Disclosed is a method and structure for altering an integrated circuit design having silicon over insulator (SOI) transistors. The method/structure prevents damage from charging during processing to the gate of SOI transistors by tracing electrical nets in the integrated circuit design, identifying SOI transistors that may have a voltage differential between the source/drain and gate as potentially damaged SOI transistors (based on the tracing of the electrical nets), and connecting a shunt device across the source/drain and the gate of each of the potentially damaged SOI transistors. Alternatively, the method/structure provides for connecting compensating conductors through a series device.
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Bonges, III Henry A.
Harmon David L.
Hook Terence B.
Lai Wing L.
Gibb I.P. Law Firm LLC
International Business Machines - Corporation
Kotulak, Esq. Richard M.
Ngo Ngan V.
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