Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2008-07-22
2008-07-22
Deo, Duy-Vu N. (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C216S018000, C216S022000, C216S038000, C257S108000, C257S295000, C257S414000, C257S421000, C365S157000, C365S158000, C365S171000, C365S173000, C438S042000, C438S692000, C438S723000, C438S724000, C438S741000, C438S754000
Reexamination Certificate
active
11139143
ABSTRACT:
A method of fabricating a cladding region for use in MRAM devices includes the formation of a conductive bit line proximate to a magnetoresistive memory device. The conductive bit line is immersed in a first bath containing dissolved ions of a first conductive material for a time sufficient to displacement plate a first barrier layer on the conductive line. The first barrier layer is then immersed in an electroless plating bath to form a flux concentrating layer on the first barrier layer. The flux concentrating layer is immersed in a second bath containing dissolved ions of a second conductive material for a time sufficient to displacement plate a second barrier layer on the flux concentrating layer.
REFERENCES:
patent: 3622469 (1971-11-01), Alberts et al.
patent: 6211090 (2001-04-01), Durlam et al.
patent: 6501144 (2002-12-01), Rizzo
patent: 6559511 (2003-05-01), Rizzo
patent: 6812040 (2004-11-01), Kyler et al.
patent: 2001/0050859 (2001-12-01), Schwarzl
patent: 2003/0089933 (2003-05-01), Janesky et al.
patent: 1052646 (1965-03-01), None
patent: WO 02/41367 (2002-05-01), None
K.Sridharan, Electrochemical Characterization of Fe-Ni-P alloy electrodeposition, Journal of applied Electrochemistry, vol. 27, (1997), pp. 1198-1206.
Mallory, Electroless Plating: Fundamentals and Applications, Noyes Publications (1990), pp. 229-230.
D'Urso John
Engel Bradley N.
Grynkewich Gregory W.
Kyler Kelly
Molla Jaynal A.
Angadi Maki
Deo Duy-Vu N.
Freescale Semiconductor Inc.
Ingrassia Fisher & Lorenz P.C.
LandOfFree
Method of applying cladding material on conductive lines of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of applying cladding material on conductive lines of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of applying cladding material on conductive lines of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3930548