Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-03-15
2005-03-15
Parekh, Nitin (Department: 2811)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S613000, C438S614000, C438S616000, C438S618000, C438S622000, C438S623000, C438S637000, C438S652000, C438S666000, C438S668000, C257S737000, C257S774000
Reexamination Certificate
active
06867121
ABSTRACT:
The present invention provides for a method of interconnecting a bumped circuit having relatively fine traces to an overlying conductive layer of a laminated circuit assembly. The overlying conductive layer is laminated with a suitable insulating adhesive over a bumped relatively fine pitch circuit layer. In the general vicinity of the desired power connection, a window substantially larger than the width of the bump is etched away from the conductive material of the trace of the outer conductive layer and the adhesive is plasma etched to expose the elevated portion of the desired bump of the bumped circuit. A conductive media such as conductive polymer or solder is then applied at the etched window of the overlying relatively coarse trace, which ensures an electrical connection between the exposed portion of the bump and the overlying trace.
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Carr LLP
Carwell Robert M.
Parekh Nitin
LandOfFree
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