Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-09-19
2006-09-19
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S660000
Reexamination Certificate
active
07109111
ABSTRACT:
A method of annealing a metal layer on a substrate in a chamber is provided. The method comprises positioning a substrate with a metal layer thereon in a chamber, removing atmospheric gases from the chamber, providing process gas to the chamber, and annealing the metal layer at a temperature greater than about 80 degrees Celsius. Also provided is a method of forming a feature on a substrate. The method comprises depositing a dielectric layer on the substrate, forming at least one opening within the dielectric layer, depositing a metal layer in the opening, positioning the substrate in an annealing chamber, removing atmospheric gases from the annealing chamber, providing process gas to the annealing chamber, and annealing the metal layer at temperature greater than about 80 degrees Celsius.
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Wang Zhonghui Alex
Zheng Bo
Applied Materials Inc.
Le Thao P.
Patterson & Sheridan LLP
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